IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...
This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...
Researchers have developed a highly efficient organic bipolar transistor. The work opens up new perspectives for organic electronics -- both in data processing and transmission, as well as in medical ...
New technical paper titled “Organic bipolar transistors” from researchers at Technische Universität Dresden, NanoP, Technische Hochschule Mittelhessen, University of Applied Science, and ALBA ...
The invention of the transistor in 1947 by Shockley, Bardeen and Brattain at Bell Laboratories ushered in the age of microelectronics and revolutionized our lives. First, so-called bipolar transistors ...
Diodes has introduced a series of low saturation npn and pnp bipolar transistors optimised for automotive power switching and control. “With BVceo up to 100V, continuous current to 10A – and 20A peak ...
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