GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN) — a pioneer in and a global supplier of high reliability, high performance gallium nitride (GaN) power conversion products — announced ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, the future of next generation power systems, today introduced three SuperGaN® FETs ...
Researchers from the University of Science and Technology of China (USTC) and collaborators have manufactured a high-performance normally-off diamond p-FET featuring high-density 2D hole gas (HG) with ...
Efficient Power Conversion Corp. (EPC) has launched the 100-V, 1-mΩ EPC2361 GaN FET at APEC 2024. Claimed as the lowest on-resistance GaN FET on the market, it offers double the power density compared ...
Navitas unveils new 100 V GaN FETs, alongside 650 V GaN and high voltage SiC devices, purpose-built for NVIDIA’s 800 VDC AI factory architecture, delivering breakthrough efficiency, power density, and ...
The RA280 integrated amplifier boasts 250-watts per channel using a unique combination of Class AD technology with GaN FETs. For 2024, HiFi Rose is offering a new integrated amplifier, the RA280 which ...
Extending Transphorm’s SuperGaN FET portfolio to higher power systems, the TP65H050G4BS is a 650-V, 50-mΩ device housed in a TO-263 (D2PAK) package. Engineers can use the TP65H050G4BS where higher ...
Check out more of our APEC 2023 coverage. This article also is part of the TechXchange: Power Supply Design. Gallium nitride (GaN) is storming into the world of power electronics. Its fast switching ...
Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die
Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne ...
Check out some of the latest products to help you get through your latest design project. Highlights include a USB Type-C switch with a host of protection features and a 650-V FET in a surface-mount, ...
No two technologies have generated more buzz in power semiconductors in recent years than GaN (Gallium Nitride) and SiC (Silicon Carbide). Both these wide band-gap (WBG) semiconductors offer several ...
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