While attending APEC 2019, it seemed that gallium-nitride (GaN) transistors were just coming into their own in high-volume applications, while silicon-carbide (SiC) transistors have found wide ...
Several foundries continue to develop new processes based on next-generation gate-all-around transistors, including more advanced high-mobility versions, but bringing these technologies into ...
Artificial intelligence (AI) has become the workload that defines today’s semiconductor scaling. Whether in hyperscale data centers training foundation models or at the network edge executing ...
The chip industry is poised for another change in transistor structure as gate-all-around (GAA) FETs replace finFETs at 3nm and below, creating a new set of challenges for design teams that will need ...
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