Fairchild Semiconductor’s Green FPS power switch, the FSFR2100, was voted February’s most popular application-specific IC on semiapps.com. This highly integrated power switch increases power ...

Gallium nitride (GaN) is breaking out in the world of power electronics. GaN stands out for its superior physical properties, including high electron mobility, wide bandgap, and high thermal ...

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...

Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices, today announced a comprehensive licensing agreement with Renesas Electronics Corporation, ...

“Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect ...

With its cutting-edge bidirectional bipolar junction transistor (B-TRAN), Ideal Power Inc. has developed a novel approach to addressing the challenges of power conversion. This four-quadrant power ...

The term ‘bandgap’ refers to the energy difference between a material’s insulating and conducting states, a critical factor determining its electrical conductivity. As shown in figure 1, with its wide ...

A new class of 3-phase solid state relays promises smarter power control for industrial automation bringing real-time ...

SUNNYVALE, Calif.--(BUSINESS WIRE)--Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer, and global supplier of a broad range of discrete power devices, wide band gap ...

Power electronics is an interdisciplinary field that centres on the efficient conversion, control and conditioning of electrical energy through semiconductor devices and innovative circuit topologies.